Minority Carrier Tunneling and Stress-Induced Leakage Current for p(+) gate MOS Capacitors with Poly-Si and Poly-Si(0.7)Ge(0.3) Gate Material
نویسندگان
چکیده
Abstract In this paper the I-V conduction mechanism for gate injection (-Vg), Stress-Induced Leakage Current(SILC) characteristics and time-to-breakdown(tbd) of PMOS capacitors with p poly-Si and poly-SiGe gate material on 5.6,4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling(MCT) from the gate is proposed for the IV and SILC characteristics at –Vg of our devices. Time-tobreakdown data are presented and discussed.
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